The essential physics of silicon semiconductor devices that form the heart of integrated circuits today are covered. An introduction to semiconductor device physics upon which device models are based leading to the development of the drift-diffusion equations. The static and dynamic behavior of PN junction diodes, bipolar junction transistors, and field effect transistors will be covered along with the application of the developed device models to integrated circuit design. Prerequisite: (ENSC 220 or MSE 250), MATH 232, and (MATH 260 or MATH 310), all with a minimum grade of C-. Students with credit for ENSC 224 or PHYS 365 may not take ENSC 324 for further credit.
The essential physics of silicon semiconductor devices that form the heart of integrated circuits today are covered. An introduction to semiconductor device physics upon which device models are based leading to the development of the drift-diffusion equations. The static and dynamic behavior of PN junction diodes, bipolar junction transistors, and field effect transistors will be covered along with the application of the developed device models to integrated circuit design. Prerequisite: (ENSC 220 or MSE 250), MATH 232, and (MATH 260 or MATH 310), all with a minimum grade of C-. Students with credit for ENSC 224 or PHYS 365 may not take ENSC 324 for further credit.
